IndiumV3, Main, Repository, bibRecord, 000976

Large energy band-gap tuning of 980 nm InGaAs/InGaAsP quantum well structure via quantum well intermixing

Identifieur interne : 000976 ( Main/Repository ); précédent : 000975; suivant : 000977

Large energy band-gap tuning of 980 nm InGaAs/InGaAsP quantum well structure via quantum well intermixing

Auteurs : RBID : Pascal:13-0019812

Descripteurs français

Pascal (Inist)
- Bande interdite, Grande puissance, Laser puissance, Haute température, Recuit, Déplacement vers le bleu, Semiconducteur bande interdite large, Composé quaternaire, Arséniure de gallium, Phosphure de gallium, Arséniure d'indium, Phosphure d'indium, Puits quantique, Oxyde de silicium, Couche mince, 8107S, InGaAsP, SiO2.

English descriptors

KwdEn :
- Annealing, Blueshift, Energy gap, Gallium arsenides, Gallium phosphide, High power, High temperature, Indium arsenides, Indium phosphide, Power laser, Quantum well, Quaternary compound, Silicon oxides, Thin film, Wide band gap semiconductors.

Abstract

Quantum well (QW) inter-mixing based post-growth energy band gap turning of 980 nm InGaAs/InGaAsP QW-structures for high power semi-conductor lasers has been investigated. The QW intermixing was carried out by depositing SiO₂ thin film on the samples and followed by high temperature annealing. The band gap energy blue shift of the QWs after the intermixing under various conditions has been studied. The largest band gap energy blue shift of the QWs reaches exceeds 220 nm.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 001451

Links to Exploration step

Pascal:13-0019812

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Large energy band-gap tuning of 980 nm InGaAs/InGaAsP quantum well structure via quantum well intermixing</title>
<author><name>QIAO ZHONGLIANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University</s1>
<s3>SGP</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Singapour</country>
<wicri:noRegion>School of Electrical and Electronic Engineering, Nanyang Technological University</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>State Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology</s1>
<s2>130022 Changchun, Jilin</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>130022 Changchun, Jilin</wicri:noRegion>
</affiliation>
</author>
<author><name>TANG XIAOHONG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University</s1>
<s3>SGP</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Singapour</country>
<wicri:noRegion>School of Electrical and Electronic Engineering, Nanyang Technological University</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Kenneth, Lee Eng Kian" uniqKey="Kenneth L">Lee Eng Kian Kenneth</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Temasek Laboratories, Nanyang Technological University</s1>
<s3>SGP</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Singapour</country>
<wicri:noRegion>Temasek Laboratories, Nanyang Technological University</wicri:noRegion>
</affiliation>
</author>
<author><name>LIM PENG HUEI</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University</s1>
<s3>SGP</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Singapour</country>
<wicri:noRegion>School of Electrical and Electronic Engineering, Nanyang Technological University</wicri:noRegion>
</affiliation>
</author>
<author><name>BO BAOXUE</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>State Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology</s1>
<s2>130022 Changchun, Jilin</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>130022 Changchun, Jilin</wicri:noRegion>
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</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0019812</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0019812 INIST</idno>
<idno type="RBID">Pascal:13-0019812</idno>
<idno type="wicri:Area/Main/Corpus">001451</idno>
<idno type="wicri:Area/Main/Repository">000976</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0038-1101</idno>
<title level="j" type="abbreviated">Solid-state electron.</title>
<title level="j" type="main">Solid-state electronics</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term>
<term>Blueshift</term>
<term>Energy gap</term>
<term>Gallium arsenides</term>
<term>Gallium phosphide</term>
<term>High power</term>
<term>High temperature</term>
<term>Indium arsenides</term>
<term>Indium phosphide</term>
<term>Power laser</term>
<term>Quantum well</term>
<term>Quaternary compound</term>
<term>Silicon oxides</term>
<term>Thin film</term>
<term>Wide band gap semiconductors</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Bande interdite</term>
<term>Grande puissance</term>
<term>Laser puissance</term>
<term>Haute température</term>
<term>Recuit</term>
<term>Déplacement vers le bleu</term>
<term>Semiconducteur bande interdite large</term>
<term>Composé quaternaire</term>
<term>Arséniure de gallium</term>
<term>Phosphure de gallium</term>
<term>Arséniure d'indium</term>
<term>Phosphure d'indium</term>
<term>Puits quantique</term>
<term>Oxyde de silicium</term>
<term>Couche mince</term>
<term>8107S</term>
<term>InGaAsP</term>
<term>SiO2</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Quantum well (QW) inter-mixing based post-growth energy band gap turning of 980 nm InGaAs/InGaAsP QW-structures for high power semi-conductor lasers has been investigated. The QW intermixing was carried out by depositing SiO<sub>2</sub>
 thin film on the samples and followed by high temperature annealing. The band gap energy blue shift of the QWs after the intermixing under various conditions has been studied. The largest band gap energy blue shift of the QWs reaches exceeds 220 nm.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0038-1101</s0>
</fA01>
<fA03 i2="1"><s0>Solid-state electron.</s0>
</fA03>
<fA05><s2>79</s2>
</fA05>
<fA08 i1="01" i2="1" l="ENG"><s1>Large energy band-gap tuning of 980 nm InGaAs/InGaAsP quantum well structure via quantum well intermixing</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>QIAO ZHONGLIANG</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>TANG XIAOHONG</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>KENNETH (Lee Eng Kian)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>LIM PENG HUEI</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>BO BAOXUE</s1>
</fA11>
<fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University</s1>
<s3>SGP</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Temasek Laboratories, Nanyang Technological University</s1>
<s3>SGP</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>State Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology</s1>
<s2>130022 Changchun, Jilin</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA20><s1>281-284</s1>
</fA20>
<fA21><s1>2013</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>2888</s2>
<s5>354000505464240520</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>14 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>13-0019812</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Solid-state electronics</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Quantum well (QW) inter-mixing based post-growth energy band gap turning of 980 nm InGaAs/InGaAsP QW-structures for high power semi-conductor lasers has been investigated. The QW intermixing was carried out by depositing SiO<sub>2</sub>
 thin film on the samples and followed by high temperature annealing. The band gap energy blue shift of the QWs after the intermixing under various conditions has been studied. The largest band gap energy blue shift of the QWs reaches exceeds 220 nm.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03F02</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A07S</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Bande interdite</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Energy gap</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Banda prohibida</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Grande puissance</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>High power</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Gran potencia</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Laser puissance</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Power laser</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Laser potencia</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Haute température</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>High temperature</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Alta temperatura</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Recuit</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Annealing</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Recocido</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Déplacement vers le bleu</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Blueshift</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Desplazamiento hacia el azul</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur bande interdite large</s0>
<s5>22</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Wide band gap semiconductors</s0>
<s5>22</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Composé quaternaire</s0>
<s5>23</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Quaternary compound</s0>
<s5>23</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Compuesto cuaternario</s0>
<s5>23</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Arséniure de gallium</s0>
<s2>NK</s2>
<s5>24</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>24</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Phosphure de gallium</s0>
<s5>25</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Gallium phosphide</s0>
<s5>25</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Galio fosfuro</s0>
<s5>25</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Arséniure d'indium</s0>
<s2>NK</s2>
<s5>26</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>26</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Phosphure d'indium</s0>
<s5>27</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Indium phosphide</s0>
<s5>27</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Indio fosfuro</s0>
<s5>27</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Puits quantique</s0>
<s5>28</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Quantum well</s0>
<s5>28</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Pozo cuántico</s0>
<s5>28</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Oxyde de silicium</s0>
<s2>NK</s2>
<s5>29</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Silicon oxides</s0>
<s2>NK</s2>
<s5>29</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Couche mince</s0>
<s5>30</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Thin film</s0>
<s5>30</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Capa fina</s0>
<s5>30</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>8107S</s0>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>InGaAsP</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>SiO2</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC07 i1="01" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>07</s5>
</fC07>
<fC07 i1="01" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>07</s5>
</fC07>
<fC07 i1="01" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>07</s5>
</fC07>
<fC07 i1="02" i2="X" l="FRE"><s0>Composé IV-VI</s0>
<s5>08</s5>
</fC07>
<fC07 i1="02" i2="X" l="ENG"><s0>IV-VI compound</s0>
<s5>08</s5>
</fC07>
<fC07 i1="02" i2="X" l="SPA"><s0>Compuesto IV-VI</s0>
<s5>08</s5>
</fC07>
<fN21><s1>014</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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Large energy band-gap tuning of 980 nm InGaAs/InGaAsP quantum well structure via quantum well intermixing

Large energy band-gap tuning of 980 nm InGaAs/InGaAsP quantum well structure via quantum well intermixing

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri